Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating
نویسندگان
چکیده
منابع مشابه
Single p-type/intrinsic/n-type silicon nanowires as nanoscale avalanche photodetectors.
We report the controlled synthesis of axial modulation-doped p-type/intrinsic/n-type (p-i-n) silicon nanowires with uniform diameters and single-crystal structures. The p-i-n nanowires were grown in three sequential steps: in the presence of diborane for the p-type region, in the absence of chemical dopant sources for the middle segment, and in the presence of phosphine for the n-type region. T...
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ژورنال
عنوان ژورنال: Beilstein Journal of Nanotechnology
سال: 2018
ISSN: 2190-4286
DOI: 10.3762/bjnano.9.210